Non-volatile memory timeline.

Ferroelectric random-access memory has similar contruction like DRAM but instead of a dielectric layer, it contains a thin ferroelectric film to achieve non-volatility. F-RAM retains its data memory when power is shut off or interrupted. F-RAM was proposed by a graduate student Dudley Allen Buck but the development began in late 1980s and work was done in 1991.
F-RAM has extremely high endurance, ultra low power consumption , etc. but low storage density and high cost.

Programmable read-only memory, was invented in 1956 by Wen Tsing Chow, is a form of digital memory where the setting of each bit is locked by a fuse or antifuse. Its first use was to store the targeting constants in the Atlas E/F ICBM's airborne digital computer. It's a one-time programmable memory.
It frequently uses in video game consoles, mobile phones, RFID tags, implantable medical devices, HDMI...

PRAM or Phase-change memory exploit the unique behavior of chalcogenide glass. In 1969, Charles Sie published a dissertation, at Iowa State University that both described and demonstrated the feasibility of a phase change memory device by integrating chalcogenide film with a diode array. PRAM is much faster than the common flash memory, from 500 to 1,000 times faster, and it also uses up to one half the power.

Erasable programmable read only memory was invented by Dov Frohman of Intel in 1971. EPROM can be erased by exposing it to strong ultraviolet light source. It has a small quartz window which admits UV light for erasure. Once you erase it, everything will be erased and you can't keep the old data. Old PC BIOS used EPROM.

Because the EPROM is too expensive to make and it doesn't keep old data when erase, EPROM is replaced by EEPROM-Electrically Erasable Programmable Read-Only Memory. In 1978, George Perlegos at Intel developed the Intel 2816, which was built on earlier EPROM technology, but used a thin gate oxide layer so that the chip could erase its own bits without requiring a UV source. EEPROM can be programmed and erased electrically using field electron emission and you can edit data on it.

Magnetoresistive RAM is under development since European scientists (Albert Fert and Peter Grünberg) discovered the "giant magnetoresistive effect" in thin-film structures. MRAM stores data by magnetic storage elements. It has the same reading and writing principle as magnetic core memory. Advantages are high density, least expensive...