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Enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a substantial amount of power.
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The intention was be a solid-state replacement for the triode
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From 05/17 to 12/23 , John Bardeen and Walter Brattain, performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance.
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In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker.
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The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent on June 26, 1948.
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Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transition" into production for amplified use in France's telephone network and filed his first transistor patent application on August 13, 1948.
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On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.
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Bell Labs had announced the discovery of this new "sandwich" transistor in a press release on July 4, 1951.
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The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz.
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The first "production" pocket transistor radio was the Regency TR-1, released in October 1954
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The metal–oxide–semiconductor field-effect transistor (MOSFET), also known as the MOS transistor, was invented by Mohamed Atalla and Dawon Kahng in 1959.
The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses.