Non-volatile Memory

  • Magnetic Core

    Magnetic Core
    Magnetic-core memory was the predominant form of random-access computer memory for 20 years (circa 1955–75). It uses tiny magnetic toroids (rings), the cores, through which wires are threaded to write and read information. Each core represents one bit of information. More information
  • F-RAM (1952)

    F-RAM (1952)
    Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s more information
  • PROM

    PROM or Programmable ROM is short for Programmable Read Only Memory and is a computer memory chip first developed by Wen Tsing Chow in 1956 that is capable of being programmed once after it has been created.
    Once the PROM has been programmed, the information written is permanent and cannot be erased or deleted. A good example of a PROM in a computer is the computer BIOS in early computers. More information

    Short for Eras able Programmable Read-Only Memory, ERPOM is a memory chip that was invented by Dov Frohman in 1971 while at Intel that can only be read from. If exposed to ultraviolet light an EPROM can be reprogrammed if needed, but otherwise does not accept or save any new data. More information
  • Mask ROM

    Mask ROM
    (MROM) A kind of ROM in which the memory contents are determined by one of the masks used to manufacture the integrated circuit. MROM can give high storage density (bits per millimeter squared) making it a cheap solution for high volume applications. More information
  • P-RAM

    In computer science, a parallel random-access machine (PRAM) is a shared-memory abstract machine. As its name indicates, the PRAM was intended as the parallel-computing analogy to the random-access machine (RAM). In the same way, that the RAM is used by sequential-algorithm designers to model algorithmic performance (such as time complexity), More information

    Short for Electrically Eras able Programmable Read-Only Memory, EEPROM is a PROM that can be erased and reprogrammed using an electrical charge that was developed by George Perlegos while at Intel in 1978. Unlike most memory inside a computer, this memory remembers data when the power is turned off. More information
  • M-RAM

    Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM.
    More information