Mingii

Non-volatile memory

By nguvihuong12

  • F-RAM

    F-RAM
    Ferroelectric RAM.
    Similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility.
    It was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952.
    Development of F-RAM began in the late 1980s.

  • Magnetic-core memory

    Magnetic-core memory
    The first use of core was in the Whirlwind computer
    It was during the early 1950s that Seeburg developed the use of this coincident current ferrite core memory storage in the "Tormat" memory of its new range of jukeboxes, starting with the V200 released in 1955. Numerous uses in computing, telephony and industrial control followed. Source : http://en.wikipedia.org/wiki/Magnetic-core_memory#Patent_wars

  • PROM

    PROM
    Programmable read-only memory.
    The PROM was invented in 1956 by Wen Tsing Chow (Arma Division of the American Bosch Arma Corporation in Garden City, New York) Source : http://en.wikipedia.org/wiki/Programmable_read-only_memory

  • P-RAM

    P-RAM
    Phase-change Memory.
    PRAMs exploit the unique behavior of chalcogenide glass. Source : http://en.wikipedia.org/wiki/Phase-change_memory

  • EPROM

    EPROM
    Erasable Programmable Read Only Memory
    The EPROM was invented by Dov Frohman (Intel)

  • EEPROM

    EEPROM
    Electrically Erasable Programmable Read-Only Memory.
    In 1978, George Perlegos at Intel developed the Intel 2816 which was built on earlier EPROM technology. Source : http://en.wikipedia.org/wiki/EEPROM

  • Semiconductor memory had superseded the magnetic-core memory by the end of the 1970s

    Semiconductor memory had superseded the magnetic-core memory by the end of the 1970s
    source : http://en.wikipedia.org/wiki/Magnetic-core_memory

  • Flash ROM

    Flash ROM
    Flash memory
    Was invented by Dr. Fujio Masuoka (Toshiba ) Source : http://en.wikipedia.org/wiki/Flash_memory

  • M-RAM

    Magnetoresistive Random-Access Memory
    A non-volatile random-access memory technology under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become dominant for all types of memory, becoming a universal memory. Source : http://en.wikipedia.org/wiki/Magnetoresistive_random-acc