The invention of the first transistor "Point Contact Type" transistor was originated at Bell Labs in Murray Hill, NJ by William Shockley, John Bardeen, and Walter Houser Brattain.
“Germanium Junction” transistors are prepared in large scale productions by major corporations such as GE, Radio Receptor, Raytheon, RCA, Sylvania, and Texas Instruments.
The “Planar” process was developed by Fairchild, and was used for the first high reliability transistors, and later used for “Monolithic” Integrated Circuits.
The “Metal Oxide” semiconductor (MOS), fabricated by Karl Zaininger and Charles Mueller was demonstrated at RCA. An MOS-controlled tetrode was built at Fairchild by C.T. Sah.
The “Silicon” transistor exceeds German speed. The fast switching germanium device for the "CDC 1604" became the first commercially successful large-scale transistor machine.
