William shockley

William Shockley

By ahemenway@arizona.edu
  • Born in London, England

    Born in London, England

    William Bradford Shockley was born in London, England, the son of William Hillman Shockley, a mining engineer born in Massachusetts and his wife, Mary (née Bradford) who had also been engaged in mining, being a deputy mineral surveyor in Nevada. William B. Shockley – Biographical. NobelPrize.org.
    Nobel Prize Outreach AB 2024. Tue. 12 Nov 2024.
  • Shockley spent two years at Palo Alto Military Academy, then briefly enrolled in the Los Angeles Coaching School to study physics and later graduated from Hollywood High School

    Shockley spent two years at Palo Alto Military Academy, then briefly enrolled in the Los Angeles Coaching School to study physics and later graduated from Hollywood High School

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html
  • Shockley earned his Bachelor of Science degree from Caltech

    Shockley earned his Bachelor of Science degree from Caltech

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html

  • Shockley married Jean Alberta Bailey. They had two sons, William and Richard, and a daughter, Alison Lanelli.

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html
  • Shockley went to MIT on a teaching fellowship. He obtained his Ph.D. degree.

    Shockley went to MIT on a teaching fellowship. He obtained his Ph.D. degree.

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html
  • William Shockley received his first patent, "Electron Discharge Device", on electron multipliers.

    William Shockley received his first patent, "Electron Discharge Device", on electron multipliers.

    Lojek, B. (2021). Appendix: Shockley’s Patents, Papers and Presentations. In: William Shockley: The Will to Think. Springer Biographies. Springer, Cham. https://doi.org/10.1007/978-3-030-65958-5_16
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    WW2

    Shockley turned to military projects during World War II. He was first employed on the electronic design of radar equipment at Bell Labs. He then became research director of the Antisubmarine Warfare Operations Research Group set up by the Navy Department at Columbia University.
  • Shockley returned to Bell Labs following the conclusion of WW2.

    Shockley returned to Bell Labs following the conclusion of WW2.

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html
  • William Shockley, John Bardeen and Walter Brattain build the first practical point-contact transistor.

    William Shockley, John Bardeen and Walter Brattain build the first practical point-contact transistor.

    Isaacson, Walter The Innovators. Simon and Schuster, 2014.
  • William Shockley files the original patent for the grown junction transistor, the first bipolar junction transistor.

    William Shockley files the original patent for the grown junction transistor, the first bipolar junction transistor.

    Lojek, B. (2021). Appendix: Shockley’s Patents, Papers and Presentations. In: William Shockley: The Will to Think. Springer Biographies. Springer, Cham. https://doi.org/10.1007/978-3-030-65958-5_16
  • William Shockley invents the junction transistor.

    William Shockley invents the junction transistor.

    Bell Labs and primarily William Shockley announced the invention of the junction transistor at a press conference in Murray Hill, NJ, the first week of July, 1951. Sources vary as to when the formal announcement was actually made, July 4 or July 5. By Suzanne Deffree
    https://www.edn.com/bell-labs-announces-junction-transistor-july-5-1951/
  • Shockley started the Shockley Semiconductor Laboratories in the Stanford industrial park

    Shockley started the Shockley Semiconductor Laboratories in the Stanford industrial park

    Shockley, William. "Memorandums," "Golden West Theme Book" and "Record," in Shockley Papers, Accession Listing 95-153, Box 2B, Department of Special Collections, Stanford University Libraries, Stanford, CA.
  • Divorced in 1955, and in the same year Shockley married Emmy Lanning.

    Divorced in 1955, and in the same year Shockley married Emmy Lanning.

    From Nobel Lectures, Physics 1942-1962, Elsevier Publishing Company, Amsterdam, 1964
  • William Shockley wins the Nobel prize for physics jointly with his two former colleagues at the Bell Telephone Laboratories, John Bardeen and Walter H. Brattain

    William Shockley wins the Nobel prize for physics jointly with his two former colleagues at the Bell Telephone Laboratories, John Bardeen and Walter H. Brattain

    From Nobel Lectures, Physics 1942-1962, Elsevier Publishing Company, Amsterdam, 1964
  • Development of the metal–oxide–semiconductor field-effect transistor (MOSFET)

    Development of the metal–oxide–semiconductor field-effect transistor (MOSFET)

    Cao, W., Bu, H., Vinet, M. et al. The future transistors. Nature 620, 501–515 (2023). https://doi.org/10.1038/s41586-023-06145-x
  • William Shockley became a member of the President's Science Advisory Committee on Scientific and Technical Manpower

    William Shockley became a member of the President's Science Advisory Committee on Scientific and Technical Manpower

    By John L. Moll
    https://nap.nationalacademies.org/resource/biomems/wshockley.html
  • William Shockley was selected as recipient of the Holley Medal of the American Society of Mechanical Engineers

    William Shockley was selected as recipient of the Holley Medal of the American Society of Mechanical Engineers

    From Nobel Lectures, Physics 1942-1962, Elsevier Publishing Company, Amsterdam, 1964
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    William Shockley view on eugenics and racism

    Shockley was a known believer of eugenics who published prolifically in support of racist policies and racist ideas, including forced sterilization for those with lower IQ, a test result he correlated with Blackness. H. Holden Thorp ,Shockley was a racist and eugenicist.Science378,683-683(2022).DOI:10.1126/science.adf8117
  • Development of the insulated-gate bipolar transistor (IGBT)

    Development of the insulated-gate bipolar transistor (IGBT)

    Cao, W., Bu, H., Vinet, M. et al. The future transistors. Nature 620, 501–515 (2023). https://doi.org/10.1038/s41586-023-06145-x
  • Shockley died of prostate cancer

    Shockley died of prostate cancer

    By Robert Longley
    Published on April 24, 2020
    https://www.thoughtco.com/biography-of-william-shockley-4843200